general description product summary v ds i d (at v gs =-10v) -2.6a r ds(on) (at v gs =-10v) < 110m w r ds(on) (at v gs =-4.5v) < 180m w symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl 70 100 90 c thermal characteristics units parameter typ max junction and storage temperature range the AO3421 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applica tions. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -30v drain-source voltage -30 t a =70c 20 gate-source voltage t a =70c i d -55 to 150 -2.6 -2.2 -20 1 v power dissipation b p d pulsed drain current c continuous drain current t a =25c w 1.4 t a =25c a maximum junction-to-ambient a maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 63 125 80 c/w r q ja sot23 top view bottom view d g s g s d g d s 1 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AO3421
symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.4 -1.9 -2.4 v i d(on) -20 a 77 110 t j =125c 100 140 125 180 m w g fs 5 s v sd -0.8 -1 v i s -1.5 a c iss 197 240 pf c oss 42 pf c rss 26 37 pf r g 3.5 7.2 11.0 w q g (10v) 4.3 5.2 nc q g (4.5v) 2.2 3 nc q gs 0.7 nc q gd 1.1 nc t d(on) 7.5 ns t r 4.1 ns t d(off) 11.8 ns t f 3.8 ns t rr 11.3 14 ns q rr 4.4 nc body diode reverse recovery charge i f =-2.6a, di/dt=100a/ m s turn-on rise time turn-off delaytime turn-off fall time turn-on delaytime dynamic parameters total gate charge v gs =-10v, v ds =-15v, i d =-2.6a gate source charge gate drain charge v gs =-10v, v ds =-15v, r l =5.8 w , r gen =3 w total gate charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =-10v, i d =-2.6a reverse transfer capacitance i s =-1a,v gs =0v v ds =-5v, i d =-2.6a v gs =-4.5v, i d =-2a maximum body-diode continuous current input capacitance output capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current v ds =v gs i d =-250 m a r ds(on) static drain-source on-resistance diode forward voltage i f =-2.6a, di/dt=100a/ m s v gs =0v, v ds =-15v, f=1mhz switching parameters body diode reverse recovery time m w forward transconductance a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. 2 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AO3421
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 2 4 6 8 10 0 1 2 3 4 5 6 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-4.5v i d =-2a v gs =-10v i d =-2.6a 60 100 140 180 220 260 300 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-2.6a 25c 125c 0 3 6 9 12 15 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-3.5v -4v -10v -5v -6v -4.5v -8v 3 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AO3421
typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 50 100 150 200 250 300 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-15v i d =-2.6a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 1s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =125c/w 100ms t on t p d 4 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AO3421
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) 5 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AO3421
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